MATERIAL FOR INSULATING FILM, FILM DEPOSITION METHOD USING SAME, AND INSULATING FILM

PROBLEM TO BE SOLVED: To obtain an insulating film wherein the dielectric constant thereof useful for an interlayer dielectric etc. of a semiconductor device is low and the mechanical strength thereof is high. SOLUTION: In the film deposition method, film deposition is carried out according to a pla...

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Hauptverfasser:	INOUE MINORU, JINRIKI MANABU, MIYAZAWA KAZUHIRO, HANESAKA SATOSHI, ONO TAKAHISA, KOBAYASHI NOBUYOSHI, TAJIMA NOBUO, HAMADA TOMOYUKI, SAKOTA KAORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain an insulating film wherein the dielectric constant thereof useful for an interlayer dielectric etc. of a semiconductor device is low and the mechanical strength thereof is high. SOLUTION: In the film deposition method, film deposition is carried out according to a plasma CVD process using any material for the insulating film selected from n-butyl dimethyl methoxy silane, n-butyl methyl silane, n-butylidene methyl methoxy silane, n-butylidene silanon, allyl dimethyl methoxy silane, allyl methyl silanon, allylidene methyl methoxy silane, allylidene silanon, vinyl ethyl methyl methoxy silane, vinyl ethyl silanon, etc. Such elements as CO2, O2, H2O, NO, N2O, NO2, CO, H2, chain hydrocarbon having 3C hydrocarbon, alcohols, and ethers may be included upon the film deposition. COPYRIGHT: (C)2007,JPO&INPIT