METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing an electrical resistance by using a metal silicide layer, when forming a contact pad connecting conductive layers exposed from the contact hole. SOLUTION: A first conductive layer, a first interlayer insulating film, a second conductive layer, and a second interlayer insulating film are sequentially formed on a semiconductor substrate, and the method followed comprises the steps of: forming a contact hole where the first conductive layer is exposed by sequentially removing the second interlayer insulating film, the second conductive layer, and the first interlayer insulating film by using an etching mask as a mask film; forming a recess between the first interlayer insulating film and the second interlayer insulating film exposed on the sidewall of the contact hole, by selectively etching the second conductive layer exposed on the sidewall of the contact hole; forming a third conductive layer of a prescribed thickness at least on either one of the bottom part or the sidewall of the contact hole, and forming the metal silicide layer burying the recess; and forming a fourth conductive layer burying the contact hole after the metal silicide layer is formed. COPYRIGHT: (C)2007,JPO&INPIT