METHOD AND DEVICE FOR MEASURING WAFER TEMPERATURE

PROBLEM TO BE SOLVED: To provide a device for measuring a wafer temperature that is a non-contact type and locally and precisely measures a wafer temperature even in a low temperature process. SOLUTION: The device measures a wafer temperature on the basis of reflected light that is irradiated to a w...

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Bibliographische Detailangaben
Hauptverfasser: AKIBA HIRONAGA, OSAWA AKIHIRO, SHIO YASUSHI, WAKAI HIDEYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a device for measuring a wafer temperature that is a non-contact type and locally and precisely measures a wafer temperature even in a low temperature process. SOLUTION: The device measures a wafer temperature on the basis of reflected light that is irradiated to a wafer of an object to be temperature-measured and then reflected. The device includes a light source 110 that generates light containing a P-polarization component with a wavelength of 400 nm or less and irradiates the light to the wafer 100, a light receiver 130 that receives light that is reflected by the wafer to detect at least strength of the P polarization component with the wavelength of 400 nm or less, and a signal processor 150 calculates a temperature of the object based on the strength of the P-polarization component detected by the light receiver. COPYRIGHT: (C)2007,JPO&INPIT