CHARGE PUMP CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREWITH

PROBLEM TO BE SOLVED: To provide a charge pump circuit capable of preventing a spike-like current occurring therein because of charging to premature start capacity in a short time when a rise or a fall in a gate control signal of MOS transistor with high capability leading to the premature start cap...

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Bibliographische Detailangaben
Hauptverfasser: TAKAHASHI TAKAHISA, TOYOOKA TETSUJI, NAGASAWA TOSHINOBU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a charge pump circuit capable of preventing a spike-like current occurring therein because of charging to premature start capacity in a short time when a rise or a fall in a gate control signal of MOS transistor with high capability leading to the premature start capacity or charge capacity is abrupt in the charge pump. SOLUTION: By adding an output impedance 14 to an output drive buffer 6 for suppressing the spike-like current, a rise or a fall in a gate control signal va0 of the drive MOS transistor 3 becomes moderate. To prevent the gate control signal from fluctuating while the drive MOS transistor 3 cuts off, a switch 5 is added to a gate of the drive MOS transistor 3, and a switch 5 is turned on at a timing when the drive MOS transistor 3 is off. This suppresses fluctuations in the gate control signal va0, thus realizing stable supply. COPYRIGHT: (C)2007,JPO&INPIT