SEMICONDUCTOR DEVICE HAVING SINGLE GATE ELECTRODE CORRESPONDING TO A PAIR OF CHANNEL REGIONS AND RANDOM ACCESS MEMORY
PROBLEM TO BE SOLVED: To provide a semiconductor device having single gate electrode corresponding to a pair of channel regions and a random access memory. SOLUTION: The semiconductor device comprises the pair of the channel regions formed a pair of fins 105a and 105b of a semiconductor substrate 11...
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| creator | BYUN SUNG-JAE LEE EUN-HONG GEN ZAIYU KIM SUK-PIL PARK YOON-DONG LEE JEONG HUN KIM WOO-JOO |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device having single gate electrode corresponding to a pair of channel regions and a random access memory. SOLUTION: The semiconductor device comprises the pair of the channel regions formed a pair of fins 105a and 105b of a semiconductor substrate 110, a gate electrode 130 corresponding to a pair of the channel regions, a source contact plug 135 which simultaneously contacts to sources formed on a pair of the fins 105a and 105b, and a drain contact plug 140 simultaneously connecting to a drain. The semiconductor device can further comprise a storage node on the drain contact plug 140 or a storage node between the channel region and the gate electrode 130. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE HAVING SINGLE GATE ELECTRODE CORRESPONDING TO A PAIR OF CHANNEL REGIONS AND RANDOM ACCESS MEMORY |
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