SEMICONDUCTOR DEVICE HAVING SINGLE GATE ELECTRODE CORRESPONDING TO A PAIR OF CHANNEL REGIONS AND RANDOM ACCESS MEMORY

PROBLEM TO BE SOLVED: To provide a semiconductor device having single gate electrode corresponding to a pair of channel regions and a random access memory. SOLUTION: The semiconductor device comprises the pair of the channel regions formed a pair of fins 105a and 105b of a semiconductor substrate 110, a gate electrode 130 corresponding to a pair of the channel regions, a source contact plug 135 which simultaneously contacts to sources formed on a pair of the fins 105a and 105b, and a drain contact plug 140 simultaneously connecting to a drain. The semiconductor device can further comprise a storage node on the drain contact plug 140 or a storage node between the channel region and the gate electrode 130. COPYRIGHT: (C)2007,JPO&INPIT