METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of manufacturing a highly reliable semiconductor device. SOLUTION: The method for manufacturing the semiconductor device forms a laminated structure including a wiring pattern on a semiconductor wafer, segment...

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Bibliographische Detailangaben
Hauptverfasser: TOCHISHITA SHOJI, HARUKI TORU, YANO KIYOSHI, MIYAKE HIDEJI, NISHIHARA KENJI, OTOMO MINORU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of manufacturing a highly reliable semiconductor device. SOLUTION: The method for manufacturing the semiconductor device forms a laminated structure including a wiring pattern on a semiconductor wafer, segments the semiconductor wafer in a predetermined shape, and then manufactures the semiconductor device. Further, the method includes: a process for forming a foundation opening respectively in the bonding pad 6 of the laminated structure before depositing a buffer coat layer 5 to be a top layer and in a scribe line part 7; a process for depositing the buffer coat layer 5 on the top layer of the laminated structure with the foundation opening formed therein; and a process for forming an opening smaller than the foundation opening in the bonding pad 6 of the buffer coat layer 5 and the scribe line 7. COPYRIGHT: (C)2007,JPO&INPIT