SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a dripping in cleavage to prevent a contamination of a light outgoing end face, and securing a high heat transferring efficiency from the light outgoing end face to a heatsink; and to provide its manufacturing method. SOLUTION: A laminate including a first clad 11, an active layer 12, and a second clad 13 having a current confinement structure is formed on a substrate 10; and a first conductive layer 16 is formed on the upper layer of the laminate by covering up to a corner between the upper surface of the laminate and the light outgoing end face. A semiconductor laser chip LD with a second conductive layer 17 formed on the first conductive layer 16 back away from the light outgoing end face SLby the predetermined width so that the first conductive layer 16 is exposed from the corner by the predetermined width is electrically and thermally connected and mounted on the heatsink 20 from the second conductive layer 17 side by a solder layer 21, and the first conductive layer 16 and the solder layer 21 are alloyed in the vicinity of the boundary between the first conductive layer 16 and the solder layer 21 in the region R where the second conductive layer 17 is back away from the corner at the predetermined width. COPYRIGHT: (C)2007,JPO&INPIT