SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which restrains an occupation area of a protection circuit to be connected to a fuse element. SOLUTION: The device has: a silicon substrate 11 wherein a semiconductor element such as an MOSFET 12 is formed in a surface; a plu...

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1. Verfasser: SATOU AKIKUNI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which restrains an occupation area of a protection circuit to be connected to a fuse element. SOLUTION: The device has: a silicon substrate 11 wherein a semiconductor element such as an MOSFET 12 is formed in a surface; a plurality of first to tenth wiring layers 23a to 23g formed outside the surface of the silicon substrate 11; a fuse element 28 formed outside the silicon substrate 11 kept away from a position facing the semiconductor element, and is grounded by a first terminal through wiring layers 23a to 23g; an interlayer dielectric 31 formed between the silicon substrate 11 and the fuse element 28; a porous insulating film 33 whose mechanical strength is lower than that of the layer insulating film 31; and a wiring resistance 25 which is formed in a position facing the fuse element 28 in a side closer to the silicon substrate 11 than the porous insulating film 33, with one end connected to a second terminal of the fuse element 28 through the wiring layers 23d to 23g, and the other end connected to the MOSFET 12 through the wiring layer 23a. COPYRIGHT: (C)2007,JPO&INPIT