METHOD FOR REDUCING DEFECT CONCENTRATION IN CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for removing defects or the strain from a non-diamond crystal under high pressure and high temperature (HP/HT) and to provide an electronic device using an improved crystal. SOLUTION: A crystal containing one or more defects and an appropriate pressure mediu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEVINSON LIONEL MONTY, LUCEK JOHN WILLIAM, DEVELYN MARK PHILIP, VAGARALI SURESH SHANKARAPPA, ARTHUR STEPHEN DALEY, ROWLAND LARRY BURTON, ANTHONY THOMAS RICHARD
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for removing defects or the strain from a non-diamond crystal under high pressure and high temperature (HP/HT) and to provide an electronic device using an improved crystal. SOLUTION: A crystal containing one or more defects and an appropriate pressure medium becoming supercritical fluid under a reaction condition are prepared, and the crystal and the pressure medium are placed in a high pressure cell, and the crystal is treated for a sufficiently long time at the reaction condition of high pressure and temperature for removing the defect or the strain in the crystal. The electronic device is formed, for example, by laminating an epitaxial semiconductor layer on the improved crystal, performing pattern formation and metallization. COPYRIGHT: (C)2007,JPO&INPIT