ETCHING AGENT, ETCHING METHOD, AND FORMED LAMINATE AND DEVICE
PROBLEM TO BE SOLVED: To provide an etching agent used for a chemical wet etching method of chemical-resistant crystal material. SOLUTION: The etching agent is provided containing a cryolite (Na3AlF6) and a halogen salt like a potassium tetrafluoroborate (KBF4). The salt exists in the etching agent...
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| creator | ROBERT JOHN WOJNAROWSKI STEVEN ALFRED TYSOE BECKER CHARLES A STEVEN FRANCIS LEBOEUF VINAYAK TILAK ARTHUR STEPHEN D EBONG ABASIFREKE U VENKAT SUBRAMANIAM VENKATARAMANI DEVELYN MARK PHILIP SUBRAMANIAN KANAKASABAPATHI FORTIN JEFFREY BERNARD SAMHITA DASGUPTA |
| description | PROBLEM TO BE SOLVED: To provide an etching agent used for a chemical wet etching method of chemical-resistant crystal material. SOLUTION: The etching agent is provided containing a cryolite (Na3AlF6) and a halogen salt like a potassium tetrafluoroborate (KBF4). The salt exists in the etching agent in sufficient amount for etching a support layer, and can have a melting temperature exceeding about 200°C. The wet etching method includes the steps of contacting the etching agent containing the cryolite and/or the potassium tetrafluoroborate on one or more surfaces of the support layer 130 containing the aluminum oxide of a multilayer laminate, and then etching at least the part of the support layer 130. An independent laminate is provided containing a gallium nitride manufactured by crystal growth on the aluminum oxide support layer 130. COPYRIGHT: (C)2007,JPO&INPIT |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ETCHING AGENT, ETCHING METHOD, AND FORMED LAMINATE AND DEVICE |
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