MANUFACTURING METHOD OF ALUMINIUM NITRIDE SINGLE CRYSTAL

MANUFACTURING METHOD OF ALUMINIUM NITRIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a manufacturing method which can efficiently manufacture a high quality single crystal with a large diameter as a result of preventing the introduction of defects into the single crystal to be obtained when manufacturing a nitride single crystal by a sublimation meth...

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Bibliographische Detailangaben
Hauptverfasser: MABUCHI TOSHIAKI, SANADA KAZUO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a manufacturing method which can efficiently manufacture a high quality single crystal with a large diameter as a result of preventing the introduction of defects into the single crystal to be obtained when manufacturing a nitride single crystal by a sublimation method. SOLUTION: When growing aluminium nitride on a seed crystal 7 by heating and sublimating a raw material powder 9 of the aluminium nitride in a heating furnace 1, the manufacturing method uses as the raw material powder 9 of the aluminium nitride one that has an average particle diameter of 10 μm or larger or a specific surface area of 0.02 m2/g or smaller. COPYRIGHT: (C)2007,JPO&INPIT