SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which is less likely to generate cracks on an interlayer insulating film, under a hydrogen diffusion preventing film, even if annealing is conducted thereto. SOLUTION: The interlayer insulating film consisting of an insu...

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Bibliographische Detailangaben

1. Verfasser:	IZUMI TAKATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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