SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which is less likely to generate cracks on an interlayer insulating film, under a hydrogen diffusion preventing film, even if annealing is conducted thereto. SOLUTION: The interlayer insulating film consisting of an insu...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which is less likely to generate cracks on an interlayer insulating film, under a hydrogen diffusion preventing film, even if annealing is conducted thereto. SOLUTION: The interlayer insulating film consisting of an insulating material is formed on a semiconductor substrate. The hydrogen diffusion preventing film formed of a material, having the hydrogen spread preventing function higher than the material of the interlayer insulating film, is formed on this interlayer insulating film. The semiconductor substrate, on which the interlayer insulating film and hydrogen diffusion preventing film are formed, is subjected to the heat treatment. In the process of forming the interlayer insulating film, the interlayer insulating film is formed under the condition that the content of water be set at 5×10-3g/cm3or lower. COPYRIGHT: (C)2007,JPO&INPIT |
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