CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMAGA NORIO, SAITO TADASHI, HIRASAWA TERUHIKO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAMAGA NORIO
SAITO TADASHI
HIRASAWA TERUHIKO
description PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time. COPYRIGHT: (C)2007,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006335582A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006335582A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006335582A3</originalsourceid><addsrcrecordid>eNrjZHB2DooMDnH08fH0c1UI9vTxdPb3U_B19At1c3QOCQ3y9HNXCPXzDFFw9HNR8AwJRpPydQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgZmxsamphZGjsZEKQIAsf4sSQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>YAMAGA NORIO ; SAITO TADASHI ; HIRASAWA TERUHIKO</creator><creatorcontrib>YAMAGA NORIO ; SAITO TADASHI ; HIRASAWA TERUHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CASTING ; CASTING OF METALS ; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; POWDER METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20061214&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006335582A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20061214&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006335582A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAGA NORIO</creatorcontrib><creatorcontrib>SAITO TADASHI</creatorcontrib><creatorcontrib>HIRASAWA TERUHIKO</creatorcontrib><title>CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CASTING</subject><subject>CASTING OF METALS</subject><subject>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POWDER METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB2DooMDnH08fH0c1UI9vTxdPb3U_B19At1c3QOCQ3y9HNXCPXzDFFw9HNR8AwJRpPydQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgZmxsamphZGjsZEKQIAsf4sSQ</recordid><startdate>20061214</startdate><enddate>20061214</enddate><creator>YAMAGA NORIO</creator><creator>SAITO TADASHI</creator><creator>HIRASAWA TERUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20061214</creationdate><title>CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD</title><author>YAMAGA NORIO ; SAITO TADASHI ; HIRASAWA TERUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006335582A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CASTING</topic><topic>CASTING OF METALS</topic><topic>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POWDER METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAGA NORIO</creatorcontrib><creatorcontrib>SAITO TADASHI</creatorcontrib><creatorcontrib>HIRASAWA TERUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAGA NORIO</au><au>SAITO TADASHI</au><au>HIRASAWA TERUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD</title><date>2006-12-14</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time. COPYRIGHT: (C)2007,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2006335582A
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CASTING
CASTING OF METALS
CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
POWDER METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T01%3A58%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAGA%20NORIO&rft.date=2006-12-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006335582A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true