CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the...

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Hauptverfasser:	YAMAGA NORIO, SAITO TADASHI, HIRASAWA TERUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method. SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time. COPYRIGHT: (C)2007,JPO&INPIT