METHOD FOR FORMING SEMICONDUCTOR DEVICE AND ITS STRUCTURE

PROBLEM TO BE SOLVED: To minimize misalignment vias penetrating an air gap when the air gap is formed. SOLUTION: Dummy features (48a, 48b) are formed within an interlaminar dielectric layer (36). In one embodiment, a non-gap filling dielectric layer (72) is formed over the dummy features to form voi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SOLOMENTSEV YURI E, SMITH BRADLEY P, YU KATHLEEN C, FILIPIAK STANLEY M, SPARKS TERRY G, STROZEWSKI KIRK J, FLAKE JOHN C, GOLDBERG CINDY K, LII YEONG-JYH T
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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