POLISHING AGENT FOR PLANARIZING SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide a polishing agent which can reduce the generation of scratch and precisely polish the surface of a semiconductor substrate at high speed in the wiring formation step of a semiconductor device. SOLUTION: The polishing agent for planarizing a semiconductor contains cer...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMAMURA YASUO, KAYANE KANJI, HOSAKA DAISUKE, HIDA FUMIKO, TAGUSARI TOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing agent which can reduce the generation of scratch and precisely polish the surface of a semiconductor substrate at high speed in the wiring formation step of a semiconductor device. SOLUTION: The polishing agent for planarizing a semiconductor contains cerium oxide particles wherein a structure parameter X showing crystallite size is 0.08-0.18, the parameter Y showing isotropic micro distortion is 0.01-0.25, and water is contained by the powdered X ray Rietveld analysis method. The content of large cerium oxide particles of ≥3 μm in size is ≤500 ppm (weight ratio), preferably ≤100 ppm. D99 (99 vol% of whole particles in the polishing agent) of the cerium oxide particles is more preferably ≤1 μm. COPYRIGHT: (C)2007,JPO&INPIT