SEMICONDUCTOR INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit in which measures against electrostatic breakdown and measures against long distance wiring are taken for the internal circuit. SOLUTION: A buffer cell 40 with an electrostatic breakdown protective circuit is arranged in a signal lin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IBE TETSUYA, TAKASHIMA YUJI, WATANABE YOSHIKAZU, KOISHIKAWA SATORU
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit in which measures against electrostatic breakdown and measures against long distance wiring are taken for the internal circuit. SOLUTION: A buffer cell 40 with an electrostatic breakdown protective circuit is arranged in a signal line 4 for transmitting the output signal from an analog circuit 2 to a digital circuit 3. The buffer cell 40 with an electrostatic breakdown protective circuit consists of a diode type protective circuit 20 for measures against electrostatic breakdown, and a buffer cell 30 for avoiding the attenuation of a signal incident to long distance wiring. Since a troublesome surge noise occurring on the analog circuit 2 side is made to escape to the digital power supply voltage through a power supply line or to the ground voltage through a ground line by the diode type protective circuit 20, the digital circuit 3 can be protected against electrostatic breakdown. The signal can be transmitted correctly even if the signal line 4 is extended over a long distance or the extra capacitance is increased due to the drive capacity of the buffer cell 30. COPYRIGHT: (C)2007,JPO&INPIT