COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY, AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a polymer for a resist having small roughness, little development defects and excellent lithographic characteristics such as DOF (depth of focus) in the polymer for the resist usable in the production of a semiconductor; and to provide a method for producing the poly...

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Bibliographische Detailangaben
Hauptverfasser:	ATSUJI KOTA, MUROI MASAAKI, OIKAWA SATORU, YAMADA MASAKAZU, SAISHO KENSUKE, TAKESHITA MASARU, YAMAGISHI TAKANORI, NAKAMURA TAKAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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