COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY, AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a polymer for a resist having small roughness, little development defects and excellent lithographic characteristics such as DOF (depth of focus) in the polymer for the resist usable in the production of a semiconductor; and to provide a method for producing the poly...

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Hauptverfasser: ATSUJI KOTA, MUROI MASAAKI, OIKAWA SATORU, YAMADA MASAKAZU, SAISHO KENSUKE, TAKESHITA MASARU, YAMAGISHI TAKANORI, NAKAMURA TAKAHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a polymer for a resist having small roughness, little development defects and excellent lithographic characteristics such as DOF (depth of focus) in the polymer for the resist usable in the production of a semiconductor; and to provide a method for producing the polymer. SOLUTION: The copolymer for the semiconductor lithography contains a repeating unit (A) having a carboxylic ester structure increasing alkali solubility at least by the action of an acid, and a repeating unit (B) having a carboxy group. The copolymer is obtained through a step (P) for (co)polymerizing at least a monomer providing the repeating unit (A), and a step (Q) for forming the repeating unit (B) by allowing the (co)polymer having the repeating unit (A) and/or the monomer providing the repeating unit (A) to coexist with the acid. COPYRIGHT: (C)2007,JPO&INPIT