POWER SEMICONDUCTOR DEVICE AND ITS METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor die and its package in which a power transistor radiating power exceeding 5 W operates efficiently at a frequency exceeding 500 MHz. SOLUTION: The power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode 541 coupled to a first electrode interconnection region covering a first major surface, a control electrode 542 coupled to a control electrode interconnection region covering the first major surface, and a second electrode 543 coupled to a second electrode interconnection region covering a second major surface. Each transistor cell has a substantially constant doping concentration in the channel region. An inductive platform region is used as the end of an epitaxial layer and sustains substantially flat equipotential lines. COPYRIGHT: (C)2007,JPO&INPIT