METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for inhibiting excessive etching in the vicinity of a gate electrode. SOLUTION: An amorphous carbon layer 46 is formed on a substrate on which layers 43 and 44 to be etched are formed. A resist pattern 47 patterned in a predetermined region is formed on the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOBAYASHI MASAHARU, YAO TERUYOSHI, HASHIMOTO KOICHI, NAORI NOBUHISA, OSHIMA MASASHI, KAWAMURA EIICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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