DIAMOND SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide an economical manufacturing method of a diamond semiconductor for growing a p-doped n-type diamond on a ä100} substrate. SOLUTION: After a diamond film whose thickness is ≥0.1 μm is grown on a diamond substrate under the nitrogen addition condition of a nitrogen conc...

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Hauptverfasser:	NISHIBAYASHI YOSHIKI, CHIKUNO TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an economical manufacturing method of a diamond semiconductor for growing a p-doped n-type diamond on a ä100} substrate. SOLUTION: After a diamond film whose thickness is ≥0.1 μm is grown on a diamond substrate under the nitrogen addition condition of a nitrogen concentration/carbon concentration of ≥0.1% and ≤5.0%, diamond growth is carried out under the phosphorus addition condition. The diamond semiconductor obtained by this method is also provided. COPYRIGHT: (C)2007,JPO&INPIT