TRANSFER MASK FOR CHARGED PARTICLE BEAM AND METHOD OF PREPARING THE SAME

PROBLEM TO BE SOLVED: To provide a transfer mask for a charged particle beam and its preparation method using a SOI substrate to control a SORI quantity Δ in a desired range simply. SOLUTION: The preparation method of the transfer mask for the charged particle beam prepares the transfer mask for the charged particle beam by forming a second layer comprised of a silicon dioxide film on the entire face of a first layer comprised of single crystal silicon for forming a supporting base, and by using the SOI (Silicon On Insulator) substrate arranged with a third layer comprised of the single crystal silicon for forming a mask pattern on the entire portion of the upper side of the second layer. Contour processing to the first layer opens through a pattern transfer area by using a TMAH (tetramethyl ammonium hydroxide) aqueous solution as an etching liquid utilizing the second layer of the SOI substrate as an etching stopper layer at least when the pattern transfer area is opened through. COPYRIGHT: (C)2007,JPO&INPIT