THIN FILM DEVICE
PROBLEM TO BE SOLVED: To provide a thin film device which can reduce a parasitic capacity as much as possible. SOLUTION: A coil 16 is formed between a lower magnetic film 12 and an upper magnetic film 17, where the coil 16 is insulated from both films 12, 17. The coil 16 is so constructed as to have...
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| creator | FUJIWARA TOSHIYASU |
| description | PROBLEM TO BE SOLVED: To provide a thin film device which can reduce a parasitic capacity as much as possible. SOLUTION: A coil 16 is formed between a lower magnetic film 12 and an upper magnetic film 17, where the coil 16 is insulated from both films 12, 17. The coil 16 is so constructed as to have a section 16M of a minimum width at edges closest to the lower and upper magnetic films 12, 17. This reduces a parasitic capacity generated between the coil 16 and the lower magnetic film 12, and the same between the coil 16 and the upper magnetic film 17, and also reduces a parasitic capacity generated between each wound wire of the coil 16. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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The coil 16 is so constructed as to have a section 16M of a minimum width at edges closest to the lower and upper magnetic films 12, 17. This reduces a parasitic capacity generated between the coil 16 and the lower magnetic film 12, and the same between the coil 16 and the upper magnetic film 17, and also reduces a parasitic capacity generated between each wound wire of the coil 16. COPYRIGHT: (C)2007,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; MAGNETS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; TRANSFORMERS</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061019&DB=EPODOC&CC=JP&NR=2006286931A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061019&DB=EPODOC&CC=JP&NR=2006286931A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJIWARA TOSHIYASU</creatorcontrib><title>THIN FILM DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a thin film device which can reduce a parasitic capacity as much as possible. SOLUTION: A coil 16 is formed between a lower magnetic film 12 and an upper magnetic film 17, where the coil 16 is insulated from both films 12, 17. The coil 16 is so constructed as to have a section 16M of a minimum width at edges closest to the lower and upper magnetic films 12, 17. This reduces a parasitic capacity generated between the coil 16 and the lower magnetic film 12, and the same between the coil 16 and the upper magnetic film 17, and also reduces a parasitic capacity generated between each wound wire of the coil 16. COPYRIGHT: (C)2007,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>MAGNETS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAI8fD0U3Dz9PFVcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGZkYWZpbGho7GRCkCACcwHcA</recordid><startdate>20061019</startdate><enddate>20061019</enddate><creator>FUJIWARA TOSHIYASU</creator><scope>EVB</scope></search><sort><creationdate>20061019</creationdate><title>THIN FILM DEVICE</title><author>FUJIWARA TOSHIYASU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006286931A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>MAGNETS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJIWARA TOSHIYASU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJIWARA TOSHIYASU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM DEVICE</title><date>2006-10-19</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a thin film device which can reduce a parasitic capacity as much as possible. SOLUTION: A coil 16 is formed between a lower magnetic film 12 and an upper magnetic film 17, where the coil 16 is insulated from both films 12, 17. The coil 16 is so constructed as to have a section 16M of a minimum width at edges closest to the lower and upper magnetic films 12, 17. This reduces a parasitic capacity generated between the coil 16 and the lower magnetic film 12, and the same between the coil 16 and the upper magnetic film 17, and also reduces a parasitic capacity generated between each wound wire of the coil 16. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES TRANSFORMERS |
| title | THIN FILM DEVICE |
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