SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate and a semiconductor device, with which slippage can be persistently prevented during the manufacturing process of a semiconductor device, even in a semiconductor substrate having low interstitial oxygen concentration. SOLUTION: The semiconductor substrate 100 is provided with a silicon wafer 10 having orientation (100). A silicon wafer 10 is formed by FZ method, and the oxygen concentration in the wafer is 1.0×1018atoms/cm3or less. Furthermore, the silicon wafer 10 comprises a device function area 10a, located on the device formation side and a protection area 10b located on the grinding surface side. A pattern layer 11, comprising a plurality of trenches 12, is formed in the grinding surface (protective region 10b) of the silicon wafer 10. The height H of the trench 12 is preferably √3 times or larger than the distance L between the trenches 12. COPYRIGHT: (C)2007,JPO&INPIT