SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a temperature detection circuit which is suitable for a CMOS process and in which arbitrary temperature inclination setting is possible. SOLUTION: The difference of both emitter voltages is impressed to a first resistor in a first transistor to which it is made for a first current to flow to an emitter and a second transistor to which it is made for a second current which serves as a current density smaller than it to flow to the emitter. A second resistor is provided between the emitter of the above second transistor and the ground potential of the circuit. A third resistor and a fourth resistor are provided between the collector of the second transistor and a power supply voltage. The collector voltage of the above first transistor and the collector voltage of the above second transistor are received, an output voltage to which they become equal is formed to supply it commonly to the bases of the first and second transistors, and a temperature detection voltage is formed from the connection point of the above first resistor and the above second resistor. COPYRIGHT: (C)2007,JPO&INPIT