SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a MIS power semiconductor device using a wideband gap semiconductor such as a GaN group compound semiconductor that attains a high withstanding voltage and a high speed switching. SOLUTION: A MIS region is formed to part of a p-Si layer 2, and a MOSFET is formed by applying an ordinary silicon process to the MIS region. Further, an insulation layer 9 is laminated on the other part of the p-Si layer 2, an n-GaN layer 10 and a p-GaN layer 11 are sequentially grown on the surface of the insulation layer 9 to produce a GaN pn diode which is used for a bulk region. Further, an n+diffusion region 7 acting like a drain of the MOSFET in the MIS region and the p-GaN layer 11 of the pn diode of the bulk region are electrically connected bi a short-circuit electrode 8. A drain electrode 13 is connected to the n-GaN layer 10. COPYRIGHT: (C)2007,JPO&INPIT