CLATHRATE COMPOUND THIN FILM MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a method for easily and efficiently manufacturing a film composed of a clathrate compound of excellent property on an arbitrary substrate without any damage of a film deposition specimen by plasma. SOLUTION: In the clathrate compound thin film manufacturing method fo...

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Bibliographische Detailangaben
Hauptverfasser:	TANEMURA SAKAE, KITA TAKUSHI, TANEMURA MASAYUKI, NAE RAI, WATANABE TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for easily and efficiently manufacturing a film composed of a clathrate compound of excellent property on an arbitrary substrate without any damage of a film deposition specimen by plasma. SOLUTION: In the clathrate compound thin film manufacturing method for manufacturing a clathrate compound thin film having a crystalline structure of a basket-shaped molecular aggregate on a substrate 16, a target 20 is sputtered by a helicon excitation sputtering method, and the clathrate compound thin film is deposited on the substrate 16. COPYRIGHT: (C)2007,JPO&INPIT