METHOD OF DETECTING SAMPLE DEFECT

PROBLEM TO BE SOLVED: To provide a detection method, which after forming a plated layer on a sample, is capable of immediately detecting defects thereof. SOLUTION: The detection method is a defect detection method for detecting defects of the sample, where a upper-plated layer (60) is formed on an S...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAKASUJI MAMORU, SATAKE TORU, NOMICHI SHINJI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a detection method, which after forming a plated layer on a sample, is capable of immediately detecting defects thereof. SOLUTION: The detection method is a defect detection method for detecting defects of the sample, where a upper-plated layer (60) is formed on an SiO2layer (62) provided with trench portions. This method is such that an electron beam (63), emitted from an electron gun, is narrowed down to be made to pass through the SiO2layer of the sample, and the electron beam is made incident on the copper plated layer at the bottom of the trench portions in the SiO2layer to be scanned. Secondary electrons (64 and 68), emitted from the scanning points, are detected, and the defects of the sample are detected. COPYRIGHT: (C)2007,JPO&INPIT