APPARATUS AND METHOD FOR CHEMICAL MECHANICAL POLISHING

PROBLEM TO BE SOLVED: To improve throughput by giving multi-function characteristic to a slurry used on a polishing table in the chemical-mechanical polishing process for polishing the wafer surface. SOLUTION: The chemical mechanical polishing apparatus 1 comprises a polishing table 7 for setting a wafer 5, a plurality of slurry supplying lines 8, 9, and 10 for supplying the slurry by dropping it on the polishing table 7, and a plurality of slurry units 11, 12, and 13 for supplying different slurries to a plurality of slurry supplying lines. With this structure, a plurality of different slurries are mixed in the predetermined mixing ratio on the polishing table 7, and thereby multiple-function can be given to the slurry used. Moreover, the CMP can be conducted continuously in a plurality of steps on the same polishing table and thereby throughput can also be improved. COPYRIGHT: (C)2006,JPO&NCIPI