FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a field-effect transistor which secures breakdown voltage BVdss, suppresses a temporal change in set current, and has small on-resistance of amplifying elements. SOLUTION: A field-effect transistor is provided with a source electrode 30 and a drain electrode 29 formed to be spaced apart from each other on a semiconductor substrate 2; and a gate electrode 22 arranged between the source electrode 30 and the drain electrode 29. In the region between the gate electrode 22 and the drain electrode 29, there are provided field plate electrodes (24 and 26) through the insulating film 21 on the upper part of the semiconductor substrate 2. The semiconductor substrate 2 has a flat surface, and is constituted in such a manner that the distance between the semiconductor substrate 2 and the field plate electrodes (24 and 26) increases according as it goes toward the drain electrode 29 from the gate electrode 22. COPYRIGHT: (C)2006,JPO&NCIPI