METHOD FOR PRODUCING HIGHLY HOMOGENEOUS LOW-STRESS SINGLE CRYSTAL WITH REDUCED SCATTERING CHARACTERISTICS

PROBLEM TO BE SOLVED: To provide a method for producing a single crystal which has a small glide belt section and a high refractive index homogeneity because only a small stress is generated, and which has only a low scattering capability, a small amount of schlieren and a small angle particle bound...

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Hauptverfasser:	PARTHIER LUTZ, AXMANN HANS-JOERG, POETISCH CHRISTIAN, STAEBLEIN JOERG, WEHRHAHN GUNTHER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a single crystal which has a small glide belt section and a high refractive index homogeneity because only a small stress is generated, and which has only a low scattering capability, a small amount of schlieren and a small angle particle boundary. SOLUTION: The method for producing a highly homogeneous low-stress large-sized single crystal comprises the steps of (a) growing a single crystal from a melt, (b) cooling the resultant single crystal and (c) tempering the single crystal. The cooling rate of the single crystal after the crystal is grown is at least 10 K/hour within the temperature range of 1,300°C to 1,050°C. COPYRIGHT: (C)2006,JPO&NCIPI