SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device having copper wiring of high electromigration resistance. SOLUTION: The semiconductor device has a wiring layer which is formed, by forming a groove or a hole in an insulating film formed on a substrate, forming a barrier layer 25 on the obtain...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KINOSHITA TAKAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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