SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device having copper wiring of high electromigration resistance. SOLUTION: The semiconductor device has a wiring layer which is formed, by forming a groove or a hole in an insulating film formed on a substrate, forming a barrier layer 25 on the obtained substrate, forming a copper seed layer 27 on the barrier layer, and forming a copper plating layer by an electrolytic plating process utilizing this copper seed layer. The copper seed layer consists of a plurality of layers, comprising a small grain layer 27a and a large grain layer 27b, having different crystal grain diameters respectively, and the small grain layer is in contact with the barrier layer. COPYRIGHT: (C)2006,JPO&NCIPI