SILICON NANO-WIRE, SEMICONDUCTOR ELEMENT INCLUDING SILICON NANO-WIRE, AND METHOD FOR MANUFACTURING SILICON NANO-WIRE

SILICON NANO-WIRE, SEMICONDUCTOR ELEMENT INCLUDING SILICON NANO-WIRE, AND METHOD FOR MANUFACTURING SILICON NANO-WIRE

PROBLEM TO BE SOLVED: To provide a silicon nano-wire, a semiconductor element including the silicon nano-wire, and a method for manufacturing the silicon nano-wire. SOLUTION: The method for manufacturing the silicon nano-wire includes (a) a step for forming fine grooves including a plurality of micr...

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Bibliographische Detailangaben
Hauptverfasser: GEN ZAIYU, CHOI BYOUNG-IYONG, LEE EUN-KYUNG, PARK WON-JUN
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT THEREOF
METALLURGY
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
TRANSPORTING
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon nano-wire, a semiconductor element including the silicon nano-wire, and a method for manufacturing the silicon nano-wire. SOLUTION: The method for manufacturing the silicon nano-wire includes (a) a step for forming fine grooves including a plurality of micro-cavity patterns regularly formed on the surface of a silicon substrate; (b) a step for forming a metallic layer by applying a substance for performing the catalytic action for forming the nano-wire on the substrate; (c) a step for forming a catalyst by coagulating metallic layers in the fine grooves existing on the surface of the substrate by heating the metallic layers; and (d) a step for growing the nano-wires in the region between the catalyst and the substrate. COPYRIGHT: (C)2006,JPO&NCIPI