MANUFACTURING METHOD OF NITRIDE-BASED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride-based semiconductor element which facilitates device separation by forming an separation trench in a nitride-based semiconductor layer, by a method where no damage is introduced into a crystal owing to collision of plasma and active ions or the like and no much time is required. SOLUTION: The manufacturing method of a nitride-based semiconductor element comprises a region preparation process of preparing a first region 20a and a second region 20b where crystal growth is more difficult to occur than the first region 20a on a principal surface, by applying predetermined processing to the principal surface of a main substrate 20; a crystal growth process of forming a nitride-based semiconductor layer 1 on the principal surface through crystal growth; and a separation process of separating the main substrate 20 at the second region 20b perpendicularly to the principal surface for every first region 20a. COPYRIGHT: (C)2006,JPO&NCIPI