MANUFACTURING METHOD FOR P-TYPE SILICON CARBIDE LAYER

PROBLEM TO BE SOLVED: To provide a manufacturing method for forming a high concentration p-type silicon carbide layer without using a special apparatus. SOLUTION: An aluminum component, and a first plate-shaped component containing an element for promoting the dissolution of silicon and carbon in the surface of a silicon carbide substrate into the aluminum when the aluminum is fused, are laminated on the surface of the silicon carbide substrate; and a p-type silicon carbide layer is formed by raising and lowering the temperature thereof. When the fused aluminum is flocculated on the silicon carbide substrate, a second plate-shaped component consisting of a material unbondable to the first plate-shaped component, and having a weight which does not flocculate the fused aluminum or a weight component consisting of a high fusing point metal not fused upon rising temperature on the second plate-shaped component, is laminated on the first plate-shaped component. The p-type silicon carbide layer is formed by raising and lowering the temperature thereof. COPYRIGHT: (C)2006,JPO&NCIPI