SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can aim at an improvement in a backward surge resistance and to provide a method of manufacturing it. SOLUTION: The semiconductor device includes a semiconductor substrate 8 which is made to have a nitride series compound semiconductor, a...

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Bibliographische Detailangaben
Hauptverfasser:	KAMII YASUHIRO, HOTATE RINSOKU, WATANABE HIDEYUKI, KATO TAKASHI, OTSUKA KOJI, MUROFUSHI HITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which can aim at an improvement in a backward surge resistance and to provide a method of manufacturing it. SOLUTION: The semiconductor device includes a semiconductor substrate 8 which is made to have a nitride series compound semiconductor, a hole 11 of a recessed part which is made of a pit or a crack which exists in one principal surface 12 of the semiconductor substrate 8, a first electrode 3 formed on the one principal surface of the semiconductor substrate 8, and a high resistive layer 10 arranged at the recessed part of the hole 11. COPYRIGHT: (C)2006,JPO&NCIPI