COMPLEMENTARY BIPOLAR TRANSISTOR HAVING HIGH EARLY VOLTAGE, EXCELLENT HIGH-FREQUENCY PERFORMANCE, AND HIGH BREAKDOWN VOLTAGE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide complementary bipolar transistors having high Early voltage, excellent high-frequency performance, and high breakdown voltage. SOLUTION: All of the NPN and PNP transistors each has an emitter (74, 80) diffused from an emitter polysilicon contact (68A, 68B), and an external base (52, 56) diffused from a base polysilicon contact (40, 42), wherein the emitter polysilicon contact is separated from the base polysilicon contact by a sidewall oxide/nitride film. Thereby, a narrow emitter with a small distance to the external base are provided. The distance between the base (62, 64) and a buried layer (14A, 16B) is set to 0.7-1.5 μm. The impurity concentration of the buried layer is prescribed with a dopant having an atomic diameter smaller than that of silicon. COPYRIGHT: (C)2006,JPO&NCIPI