RESIN SEALED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor device, even when a semiconductor element is made thin in a resin sealed semiconductor device, where the semiconductor element and a substrate are connected by wire bonding. SOLUTION: In the semiconductor device, a plurality of electrode pad...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NISHIMURA TAKAO, KUMAGAI KINICHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NISHIMURA TAKAO
KUMAGAI KINICHI
description PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor device, even when a semiconductor element is made thin in a resin sealed semiconductor device, where the semiconductor element and a substrate are connected by wire bonding. SOLUTION: In the semiconductor device, a plurality of electrode pads are arranged in a train on the peripheral section of the semiconductor element. A plurality of bonding pads for connection with the electrode pads are disposed on the first surface of a substrate, and a plurality of external electrode terminals are disposed on the second surface of the same on a side opposite to the same. The electrode pads and the bonding pads are electrically connected through wires. A plate-shaped member is fixed by bonding to the inside of the electrode pad train on the semiconductor element. The semiconductor element, wire, and at least the peripheral side surface of the plate shaped member are integrally sealed with sealing resin. In the semiconductor device, the plate-shaped member has a thermal expansion coefficient smaller than that of the sealing resin. COPYRIGHT: (C)2006,JPO&NCIPI
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006216776A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006216776A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006216776A3</originalsourceid><addsrcrecordid>eNrjZFAMcg329FMIdnX0cXUBUr6ezv5-LqHOIf5BCi6uYZ7OrjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAwMzI0Mzc3MzRmChFAFlLIqQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RESIN SEALED SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>NISHIMURA TAKAO ; KUMAGAI KINICHI</creator><creatorcontrib>NISHIMURA TAKAO ; KUMAGAI KINICHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor device, even when a semiconductor element is made thin in a resin sealed semiconductor device, where the semiconductor element and a substrate are connected by wire bonding. SOLUTION: In the semiconductor device, a plurality of electrode pads are arranged in a train on the peripheral section of the semiconductor element. A plurality of bonding pads for connection with the electrode pads are disposed on the first surface of a substrate, and a plurality of external electrode terminals are disposed on the second surface of the same on a side opposite to the same. The electrode pads and the bonding pads are electrically connected through wires. A plate-shaped member is fixed by bonding to the inside of the electrode pad train on the semiconductor element. The semiconductor element, wire, and at least the peripheral side surface of the plate shaped member are integrally sealed with sealing resin. In the semiconductor device, the plate-shaped member has a thermal expansion coefficient smaller than that of the sealing resin. COPYRIGHT: (C)2006,JPO&amp;NCIPI</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060817&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006216776A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060817&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006216776A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIMURA TAKAO</creatorcontrib><creatorcontrib>KUMAGAI KINICHI</creatorcontrib><title>RESIN SEALED SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor device, even when a semiconductor element is made thin in a resin sealed semiconductor device, where the semiconductor element and a substrate are connected by wire bonding. SOLUTION: In the semiconductor device, a plurality of electrode pads are arranged in a train on the peripheral section of the semiconductor element. A plurality of bonding pads for connection with the electrode pads are disposed on the first surface of a substrate, and a plurality of external electrode terminals are disposed on the second surface of the same on a side opposite to the same. The electrode pads and the bonding pads are electrically connected through wires. A plate-shaped member is fixed by bonding to the inside of the electrode pad train on the semiconductor element. The semiconductor element, wire, and at least the peripheral side surface of the plate shaped member are integrally sealed with sealing resin. In the semiconductor device, the plate-shaped member has a thermal expansion coefficient smaller than that of the sealing resin. COPYRIGHT: (C)2006,JPO&amp;NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAMcg329FMIdnX0cXUBUr6ezv5-LqHOIf5BCi6uYZ7OrjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAwMzI0Mzc3MzRmChFAFlLIqQ</recordid><startdate>20060817</startdate><enddate>20060817</enddate><creator>NISHIMURA TAKAO</creator><creator>KUMAGAI KINICHI</creator><scope>EVB</scope></search><sort><creationdate>20060817</creationdate><title>RESIN SEALED SEMICONDUCTOR DEVICE</title><author>NISHIMURA TAKAO ; KUMAGAI KINICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006216776A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIMURA TAKAO</creatorcontrib><creatorcontrib>KUMAGAI KINICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIMURA TAKAO</au><au>KUMAGAI KINICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIN SEALED SEMICONDUCTOR DEVICE</title><date>2006-08-17</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor device, even when a semiconductor element is made thin in a resin sealed semiconductor device, where the semiconductor element and a substrate are connected by wire bonding. SOLUTION: In the semiconductor device, a plurality of electrode pads are arranged in a train on the peripheral section of the semiconductor element. A plurality of bonding pads for connection with the electrode pads are disposed on the first surface of a substrate, and a plurality of external electrode terminals are disposed on the second surface of the same on a side opposite to the same. The electrode pads and the bonding pads are electrically connected through wires. A plate-shaped member is fixed by bonding to the inside of the electrode pad train on the semiconductor element. The semiconductor element, wire, and at least the peripheral side surface of the plate shaped member are integrally sealed with sealing resin. In the semiconductor device, the plate-shaped member has a thermal expansion coefficient smaller than that of the sealing resin. COPYRIGHT: (C)2006,JPO&amp;NCIPI</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2006216776A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RESIN SEALED SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T14%3A47%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIMURA%20TAKAO&rft.date=2006-08-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006216776A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true