PHOTORESIST COMPOSITION, PATTERN FORMING METHOD USING THE SAME AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DISPLAY PANEL

PROBLEM TO BE SOLVED: To provide a photoresist composition capable of suppressing cracking in a photoresist film in a photo-etching step, a pattern forming method using the same and a method for manufacturing a thin film transistor display panel. SOLUTION: The photoresist composition comprises a nov...

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Hauptverfasser:	LEE HI-KUK, RYU BIZEN, JEON WOO-SEOK, PARK JEONG-MIN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photoresist composition capable of suppressing cracking in a photoresist film in a photo-etching step, a pattern forming method using the same and a method for manufacturing a thin film transistor display panel. SOLUTION: The photoresist composition comprises a novolac resin represented by formula (1), a mercapto compound represented by formula (2), a photosensitive agent and a solvent. In formula (1), R1-R4are each independently H or a 1-6C alkyl and n is an integer of 0-3. In formula (2) R1and R2are each independently a 1-20C alkyl or allyl. COPYRIGHT: (C)2006,JPO&NCIPI