GALLIUM-NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
PROBLEM TO BE SOLVED: To obtain a light-emitting device that is a single element, has a low operating voltage, and can emit white light having high luminous efficiency. SOLUTION: In a gallium-nitride-based compound semiconductor light-emitting device having a laminated structure including a luminous...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To obtain a light-emitting device that is a single element, has a low operating voltage, and can emit white light having high luminous efficiency. SOLUTION: In a gallium-nitride-based compound semiconductor light-emitting device having a laminated structure including a luminous layer 4 made of a gallium-nitride-based compound semiconductor containing at least In and Ga, the luminous layer 4 has a region whose In ratio is relatively small and that whose In ratio is relatively large in a plane, blue light and yellow one are emitted in each region, and white light is obtained from the entire luminous layer 4 by mixing the blue light with the yellow light. COPYRIGHT: (C)2006,JPO&NCIPI |
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