PHOTORESIST STRIPPING COMPOSITION AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide a photoresist stripping composition and a method for fabricating a semiconductor device using the composition. SOLUTION: The photoresist stripping composition comprises a mixed solution of acetone and isopropyl alcohol, with about 50:50 to about 95:5 volume ratio of acetone to isopropyl alcohol. The method comprises forming a layer to be etched on a semiconductor substrate. A photoresist film is formed on the layer to be etched. After the photoresist film is patterned to form a photoresist pattern, the photoresist pattern is used as an etching mask to etch the layer to be etched. The semiconductor substrate is immersed in a photoresist stripping composition bath containing a mixed solution of acetone and isopropyl alcohol to remove the photoresist pattern. Then the semiconductor substrate is transferred to an isopropyl alcohol bath to be rinsed. The semiconductor substrate is transferred to a deionized water bath to be rinsed. Next, the semiconductor substrate is dried. COPYRIGHT: (C)2006,JPO&NCIPI