ELECTROLESS NICKEL-PHOSPHORUS PLATED COATING AND ELECTROLESS NICKEL-PHOSPHORUS PLATING BATH

PROBLEM TO BE SOLVED: To provide an electroless nickel-phosphorus plating film which is excellent in flexibility and has a small internal stress and hardly increases the internal stress even if heated, and also to provide an electroless nickel-phosphorus plating bath appropriate for formation of suc...

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Bibliographische Detailangaben
Hauptverfasser:	KUZUHARA AKIRA, TADA MASANORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an electroless nickel-phosphorus plating film which is excellent in flexibility and has a small internal stress and hardly increases the internal stress even if heated, and also to provide an electroless nickel-phosphorus plating bath appropriate for formation of such electroless nickel-phosphorus plating film. SOLUTION: The electroless nickel-phosphorus plating film composed of columnar crystals oriented in the thickness direction of the electroless nickel-phosphorus plating film formed on an object to be plated and the electroless nickel-phosphorus plating bath containing a water-soluble nickel salt and hypophosphorous acid and/or its salt, aminocarboxylic acid and/or its salt, and not containing organic carboxylic acid exclusive of aminocarboxylic acid and/or its salt are provided. A flexible substrate formed with the plating film has the highly flexible film and substantially prevents the occurrence of a crack and peeling in the film. A silicon wafer formed with the plating film has the small internal stress of the film and warping of the silicon wafer is hardly formed by the heating treatment. COPYRIGHT: (C)2006,JPO&NCIPI