SEMICONDUCTOR MEMORY
PROBLEM TO BE SOLVED: To write a desired data pattern in a parity cell array. SOLUTION: Regular data inpuutted/outputted to/from external data terminals DQ is read/written from/to a regular cell array CA1, and parity data is read/written from/to a parity cell array PCA. Since the parity data is gene...
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creator | ONISHI YASUHIRO KIKUTAKE AKIRA KAWABATA KUNINORI SASAKI JUNICHI MISHIRO TOSHIYA |
description | PROBLEM TO BE SOLVED: To write a desired data pattern in a parity cell array. SOLUTION: Regular data inpuutted/outputted to/from external data terminals DQ is read/written from/to a regular cell array CA1, and parity data is read/written from/to a parity cell array PCA. Since the parity data is generated by a parity generation circuit 16, it is difficult to write a desired pattern to the parity cell array PCA. The regular data and the parity data are exchanged with each other by a a switch circuit SW, so that the regular data can be written to the parity cell array PCA and the parity data can be written to the regular cell array CA1. Therefore, the desired data can be written in the parity cell array PCA, a test of the parity cell array PCA can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted. COPYRIGHT: (C)2006,JPO&NCIPI |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006202457A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006202457A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006202457A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUvB19fUPiuRhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmZGBkYmpuaOxkQpAgDLWB8_</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MEMORY</title><source>esp@cenet</source><creator>ONISHI YASUHIRO ; KIKUTAKE AKIRA ; KAWABATA KUNINORI ; SASAKI JUNICHI ; MISHIRO TOSHIYA</creator><creatorcontrib>ONISHI YASUHIRO ; KIKUTAKE AKIRA ; KAWABATA KUNINORI ; SASAKI JUNICHI ; MISHIRO TOSHIYA</creatorcontrib><description>PROBLEM TO BE SOLVED: To write a desired data pattern in a parity cell array. SOLUTION: Regular data inpuutted/outputted to/from external data terminals DQ is read/written from/to a regular cell array CA1, and parity data is read/written from/to a parity cell array PCA. Since the parity data is generated by a parity generation circuit 16, it is difficult to write a desired pattern to the parity cell array PCA. The regular data and the parity data are exchanged with each other by a a switch circuit SW, so that the regular data can be written to the parity cell array PCA and the parity data can be written to the regular cell array CA1. Therefore, the desired data can be written in the parity cell array PCA, a test of the parity cell array PCA can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060803&DB=EPODOC&CC=JP&NR=2006202457A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060803&DB=EPODOC&CC=JP&NR=2006202457A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONISHI YASUHIRO</creatorcontrib><creatorcontrib>KIKUTAKE AKIRA</creatorcontrib><creatorcontrib>KAWABATA KUNINORI</creatorcontrib><creatorcontrib>SASAKI JUNICHI</creatorcontrib><creatorcontrib>MISHIRO TOSHIYA</creatorcontrib><title>SEMICONDUCTOR MEMORY</title><description>PROBLEM TO BE SOLVED: To write a desired data pattern in a parity cell array. SOLUTION: Regular data inpuutted/outputted to/from external data terminals DQ is read/written from/to a regular cell array CA1, and parity data is read/written from/to a parity cell array PCA. Since the parity data is generated by a parity generation circuit 16, it is difficult to write a desired pattern to the parity cell array PCA. The regular data and the parity data are exchanged with each other by a a switch circuit SW, so that the regular data can be written to the parity cell array PCA and the parity data can be written to the regular cell array CA1. Therefore, the desired data can be written in the parity cell array PCA, a test of the parity cell array PCA can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUvB19fUPiuRhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmZGBkYmpuaOxkQpAgDLWB8_</recordid><startdate>20060803</startdate><enddate>20060803</enddate><creator>ONISHI YASUHIRO</creator><creator>KIKUTAKE AKIRA</creator><creator>KAWABATA KUNINORI</creator><creator>SASAKI JUNICHI</creator><creator>MISHIRO TOSHIYA</creator><scope>EVB</scope></search><sort><creationdate>20060803</creationdate><title>SEMICONDUCTOR MEMORY</title><author>ONISHI YASUHIRO ; KIKUTAKE AKIRA ; KAWABATA KUNINORI ; SASAKI JUNICHI ; MISHIRO TOSHIYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006202457A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ONISHI YASUHIRO</creatorcontrib><creatorcontrib>KIKUTAKE AKIRA</creatorcontrib><creatorcontrib>KAWABATA KUNINORI</creatorcontrib><creatorcontrib>SASAKI JUNICHI</creatorcontrib><creatorcontrib>MISHIRO TOSHIYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONISHI YASUHIRO</au><au>KIKUTAKE AKIRA</au><au>KAWABATA KUNINORI</au><au>SASAKI JUNICHI</au><au>MISHIRO TOSHIYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY</title><date>2006-08-03</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To write a desired data pattern in a parity cell array. SOLUTION: Regular data inpuutted/outputted to/from external data terminals DQ is read/written from/to a regular cell array CA1, and parity data is read/written from/to a parity cell array PCA. Since the parity data is generated by a parity generation circuit 16, it is difficult to write a desired pattern to the parity cell array PCA. The regular data and the parity data are exchanged with each other by a a switch circuit SW, so that the regular data can be written to the parity cell array PCA and the parity data can be written to the regular cell array CA1. Therefore, the desired data can be written in the parity cell array PCA, a test of the parity cell array PCA can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | SEMICONDUCTOR MEMORY |
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