FORMING METHOD FOR SELF-ALIGNED CONTACT

PROBLEM TO BE SOLVED: To provide a forming method for a self-aligned contact that can improve the reliability by upgrading the margin of the CMP (Chemical Mechanical Polishing) process, and preventing short-circuit generation between conductive layers. SOLUTION: A substrate is provided on whose surface multiple structures are formed, separated at a specified distance. A sacrificial layer, which is composed of materials with specified thermal resistance, is vapor-disposed at the top and among these multiple structures. The sacrificial layer is patterned so that those parts adjacent to the multiple structures on the substrate are not be exposed. An insulating film is formed over the sacrifice layer and on the exposed parts of the substrate. When the insulating film is formed, thermal treatment is also conducted at a temperature lower than the heat-resistance temperature of the sacrificial layer materials. The insulating film is planarized so that the sacrificial layer is not be exposed. The insulating layer is removed so that respective regions among the multiple structures are not be exposed. Respective regions, among the multiple structures, are filled with conductive materials. COPYRIGHT: (C)2006,JPO&NCIPI