METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device capable of preventing generation of void in a photo-resist used for an ion implantation mask and blocking entry of dopant into non-active region of a substrate during ion implantation. SOLUTION: The method comprises steps of providing a semiconductor substrate 10 divided into an active region A and a non-active region B and patterned with a conductive pattern 11, forming a cushion film 12, applying organic substance which has higher fluidity than a photo-resist film on the cushion film 12, heating and making the organic substance flow between the conductive patterns 11 to fill partially between the patterns 11, applying photo-resist film on the whole of it, forming photo-resist pattern 14A in which the active area A is opened by exposure and development, and performing ion implantation with a mask of the photo-resist pattern 14A to form a bonding region 15 in the active region A of the semiconductor substrate 10. COPYRIGHT: (C)2006,JPO&NCIPI