POLISHING SOLUTION FOR METAL, AND POLISHING METHOD

PROBLEM TO BE SOLVED: To provide a metal polishing solution with a high metal polishing rate and high productivity which is suitable for a semiconductor device and apparatus which are excellent in fining, thin film processing, dimensional accuracy, electrical characteristics and reliability, and a p...

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Bibliographische Detailangaben
Hauptverfasser:	SAKURADA TAKASHI, SHINODA TAKASHI, ANZAI SO, OMORI YOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a metal polishing solution with a high metal polishing rate and high productivity which is suitable for a semiconductor device and apparatus which are excellent in fining, thin film processing, dimensional accuracy, electrical characteristics and reliability, and a polishing method using it. SOLUTION: The metal polishing solution comprises an abrasive grain and its characteristic after defrosting is not practically different than before freezing. In the polishing method, a polishing film is polished by relatively moving a polishing board and a substrate by pressing the substrate having the polishing film to a polishing cloth while supplying the metal polishing solution on the polishing cloth of the polishing board. COPYRIGHT: (C)2006,JPO&NCIPI